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| ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage 2SD1616 2SD1616A Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (pulse) Power Dissipation Junction Temperature Storage Temperature Range 1) PW10ms, Duty Cycle50% 1) Value 60 120 Unit V VCBO 2SD1616 2SD1616A VCEO VEBO IC IC Ptot Tj TS 50 60 6 1 2 0.75 150 -55 to +150 V V A A W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SD1616 / 2SD1616A Characteristics at Tamb=25 OC Symbol DC Current Gain 2) Min. Typ. Max. Unit at VCE=2V, IC=100mA R O Y hFE hFE hFE hFE 135 200 300 81 600 100 - - 270 400 600 700 mV nA nA V V MHz pF s s s at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage at IC=1A, IB=50mA Base Saturation Voltage at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=-100mA Output Capacitance at VCB=10V, f=1MHz Turn-on Time Storage Time Fall Time at VCC=10V, IC=-100mA IB1=-IB2=10 mA VBE(off)=-2 to 3 V 2) 2) VBE ICBO IEBO VCE(sat) VBE(sat) fT COB ton tstg tf 0.15 0.9 160 19 0.07 0.95 0.07 100 100 0.3 1.2 - 2) Pulsed PW350s, Duty Cycle2% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 |
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